MILDTL19491J
3. REQUIREMENTS
3.1 General. The packaging terms used herein shall be in accordance with the definitions listed in MILSTD129,
MILSTD1686, MILSTD2073. The following general requirements apply, as applicable, to military or commercial
packaging.
3.1.1 Shipments to Government activities.
3.1.1.1 Pairs and sets. Semiconductor devices furnished in pairs or sets under one national stock number (NSN)
shall be unit packaged as one pair or one set, as applicable. When specified in a detail specification, matched diodes
shall be packaged with a statement to that effect. Unless otherwise specified, unit of issue (each pair, set) shall be
individually unit packed.
3.1.1.2 Hardware. Hardware accompanying semiconductor devices shall be protected and enclosed within the
unit pack in a manner that will not damage the device or pack. When practical or when the semiconductor devices
are not otherwise protected, the hardware should be mounted on each device.
3.1.1.3 Physical protection. Semiconductor devices and accessories shall be packaged in a manner that will
ensure compliance with the applicable requirements of MILSTD20731 as well as those specified herein.
3.1.1.4 Wrapping and cushioning and lead protection for semiconductor devices. Leads and terminals, excluding
axial leaded devices, shall be protected by container design, die-cut inserts, vials, or non-corrosive supporting
materials or devices to prevent damage to the item or packaging. Leads or terminals shall extend outward and be
maintained in a configuration as manufactured without causing undue loads or stresses capable of causing damage
to the devices. Materials used to maintain item position and lead configuration shall permit item removal and
replacement without bending the leads. All semiconductor devices shall be wrapped or cushioned with non-corrosive
materials, which shall not crumble, flake, powder, or shed. In addition, no static generating materials shall be used
for semiconductor devices susceptible to electric field force damage. For these susceptible devices, materials
conforming to type I or III of MILPRF81705 or bags conforming to MILDTL117, type I, class F, style 1 shall be
used as wraps or pouches, respectively. Alternatively, cushioning materials conforming to CID (Commercial Item
Description) AA59135 for sheet material and AA59136 for plank material may be used. Any materials used shall
be in accordance with MILSTD20731 for wrapping materials and for cushioning materials. No special protection
is required for axial leaded devices that are not electrostatic discharge sensitive (ESDS).
3.1.1.5 Electrostatic and electromagnetic shielding and corrosion protection. Electrostatic and electromagnetic
shielding (as well as protection from corrosion, and contamination) shall be provided by placing the wrapped or
cushioned semiconductor device in heat sealed bags fabricated with material conforming to MILDTL117, type I,
class F, style 1. For immediate use applications and for those instances where no exposure to electrostatic or
electromagnetic fields are anticipated, barrier material conforming to type I or III of MILPRF81705 may be used.
Electrostatic and electromagnetic shielding protection shall be mandatory for all:
a.
Mixer diodes (microwave diodes).
b.
MOSFET transistors (insulated gate field effect).
c.
Junction field-effect transistors.
d.
Silicon controlled rectifiers (SCR).
e.
Small signal Schottky diodes (Schottky barrier).
f.
RF (semiconductor devices not otherwise named which operate at a frequency above 1 gigahertz).
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